| Mfg Part Number: 21049355-101 | Alternate P/N: 21049355101 | Manufacturer: Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor |
| NSN : 5962-01-358-4069 | Item Name : microcircuit memory | CAGE Code : 81395 |
| FSC : 5962 Microcircuits Electronic |
Thank you for choosing to source 21049355-101 parts from Integrated Enterprise. This particular Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor item is listed alongside the NSN 5962-01-358-4069 and part number 21049355-101, allowing you to locate it with ease. Since this item is immediately available for procurement, we encourage you to take advantage of our Instant RFQ service to acquire a competitive quote for your comparisons. On an RFQ form, you can specify your desired quantities and target prices. As our team members are on standby 24/7x365, responses to requests or inquiries are completed with haste.
Take your time to explore our ever-expanding catalogs and you will find that the NSN 5962-01-358-4069 can be found listed under CAGE Code 81395. However, we carry an array of other NSN products, all of which have been sourced from trusted distributors like Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Get started on the procurement process with a quote request that includes all of your NSN part requirements, and see how Integrated Enterprise can serve as your go-to sourcing solution. For additional questions, call or email us directly; we are ready to help you meet your operational deadlines however necessary.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-358-4069 Item Description: Microcircuit Memory | 5962 | 013584069 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 21049355-101 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-40 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN38 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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